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University of Missouri--Kansas City

Measuring Level of Degradation in Power Semiconductor Devices using Emerging Techniques

Abstract

dc:description.abstract

High thermal and electrical stress, over a period of time tends to deteriorate the health of power electronic switches. Being a key element in any high-power converter systems, power switches such as insulated-gate bipolar junction transistors (IGBTs) and metal-oxide semiconductor field-effect transistors (MOSFETs) are constantly monitored to predict when and how they might fail. A huge fraction of research efforts involves the study of power electronic device reliability and development of novel techniques with higher accuracy in health estimation of such devices. Until today, no other existing techniques can determine the number of lifted bond wires and their locations in a live IGBT module, although this information is extremely helpful to understand the overall state of health (SOH) of an IGBT power module. Through this research work, two emerging methods for online condition monitoring of power IGBTs and MOSFETs have been proposed. First method is based on reflectometry, more specifically, spread spectrum time domain reflectometry (SSTDR) and second method is based on ultrasound based non-destructive evaluation (NDE). Unlike traditional methods, the proposed methods do not require measuring any electrical parameters (such as voltage or current), therefore, minimizes the measurement error. In addition, both of these methods are independent of the operating points of the converter which makes the application of these methods more feasible for any field application. As part of the research, the RL-equivalent circuit to represent the bond wires of an IGBT module has been developed for the device under test. In addition, an analytical model of ultrasound interaction with the bond wires has been derived in order to efficiently detect the bond wire lift offs within the IGBT power module. Both of these methods are equally applicable to the wide band gap (WBG) power devices and power converters. The successful implementation of these methods creates a provision for condition monitoring (CM) hardware embedded gate driver module which will significantly reduce the overall health monitoring cost.

Degree

thesis:*
Name thesis:degree_name
Ph.D. (Doctor of Philosophy)
Level thesis:degree_level
Doctoral
Discipline thesis:degree_discipline
Computer Science (UMKC)
Grantor
University of Missouri--Kansas City
Year dc:date.issued
2021

Author and committee

dc:creator, dc:contributor.*
Author dc:creator
  • Hanif, Abu
Advisor dc:contributor.advisor
  • Khan, Faisal

Identifiers

dc:identifier.*
Handle dc:identifier.uri
https://hdl.handle.net/10355/83802
OAI identifier oai:identifier
oai:mospace.umsystem.edu:10355/83802

Chain of custody

source
Harvested from
University of Missouri - Kansas City
Base URL
mospace.umsystem.edu/oai/request
Last updated
2026-07-24
Source record
OAI-PMH GetRecord
related terms
citation

Hanif, Abu. Measuring Level of Degradation in Power Semiconductor Devices using Emerging Techniques. Doctoral thesis, University of Missouri--Kansas City, 2021. https://hdl.handle.net/10355/83802