{"id":{"repo_id":"umkc","oai_identifier":"oai:mospace.umsystem.edu:10355/83802"},"canonical_url":"https://search.dev.ndltd.org/etd/umkc/oai:mospace.umsystem.edu:10355/83802","repository":{"repo_id":"umkc","name":"University of Missouri - Kansas City","base_url":"https://mospace.umsystem.edu/oai/request"},"display":{"title":"Measuring Level of Degradation in Power Semiconductor Devices using Emerging Techniques","abstract":"High thermal and electrical stress, over a period of time tends to deteriorate the health of power electronic switches. Being a key element in any high-power converter systems, power switches such as insulated-gate bipolar junction transistors (IGBTs) and metal-oxide semiconductor field-effect transistors (MOSFETs) are constantly monitored to predict when and how they might fail. A huge fraction of research efforts involves the study of power electronic device reliability and development of novel techniques with higher accuracy in health estimation of such devices. Until today, no other existing techniques can determine the number of lifted bond wires and their locations in a live IGBT module, although this information is extremely helpful to understand the overall state of health (SOH) of an IGBT power module. Through this research work, two emerging methods for online condition monitoring of power IGBTs and MOSFETs have been proposed. First method is based on reflectometry, more specifically, spread spectrum time domain reflectometry (SSTDR) and second method is based on ultrasound based non-destructive evaluation (NDE). Unlike traditional methods, the proposed methods do not require measuring any electrical parameters (such as voltage or current), therefore, minimizes the measurement error. In addition, both of these methods are independent of the operating points of the converter which makes the application of these methods more feasible for any field application. As part of the research, the RL-equivalent circuit to represent the bond wires of an IGBT module has been developed for the device under test. In addition, an analytical model of ultrasound interaction with the bond wires has been derived in order to efficiently detect the bond wire lift offs within the IGBT power module. Both of these methods are equally applicable to the wide band gap (WBG) power devices and power converters. The successful implementation of these methods creates a provision for condition monitoring (CM) hardware embedded gate driver module which will significantly reduce the overall health monitoring cost.","abstract_html":"High thermal and electrical stress, over a period of time tends to deteriorate the health of power electronic switches. Being a key element in any high-power converter systems, power switches such as insulated-gate bipolar junction transistors (IGBTs) and metal-oxide semiconductor field-effect transistors (MOSFETs) are constantly monitored to predict when and how they might fail. A huge fraction of research efforts involves the study of power electronic device reliability and development of novel techniques with higher accuracy in health estimation of such devices. Until today, no other existing techniques can determine the number of lifted bond wires and their locations in a live IGBT module, although this information is extremely helpful to understand the overall state of health (SOH) of an IGBT power module. Through this research work, two emerging methods for online condition monitoring of power IGBTs and MOSFETs have been proposed. First method is based on reflectometry, more specifically, spread spectrum time domain reflectometry (SSTDR) and second method is based on ultrasound based non-destructive evaluation (NDE). Unlike traditional methods, the proposed methods do not require measuring any electrical parameters (such as voltage or current), therefore, minimizes the measurement error. In addition, both of these methods are independent of the operating points of the converter which makes the application of these methods more feasible for any field application. As part of the research, the RL-equivalent circuit to represent the bond wires of an IGBT module has been developed for the device under test. In addition, an analytical model of ultrasound interaction with the bond wires has been derived in order to efficiently detect the bond wire lift offs within the IGBT power module. Both of these methods are equally applicable to the wide band gap (WBG) power devices and power converters. The successful implementation of these methods creates a provision for condition monitoring (CM) hardware embedded gate driver module which will significantly reduce the overall health monitoring cost.","abstract_has_math":false,"creators":["Hanif, Abu"],"institution":"University of Missouri--Kansas City","degree_name":"Ph.D. (Doctor of Philosophy)","degree_level":"Doctoral","degree_discipline":"Computer Science (UMKC)","degree_department":null,"school":null,"contributors":[],"advisors":["Khan, Faisal"],"committee_chairs":[],"committee_members":[],"year":2021,"date_issued":"2021","date_published":"2021","updated_at":"2026-07-24T05:18:34Z","subjects":[],"languages":[],"rights":[],"rights_urls":[],"identifier_entries":[]},"links":{"outbound_url":"https://hdl.handle.net/10355/83802","outbound_label":"Handle","outbound_source":"dc:identifier.uri"},"metadata_groups":[{"id":"people","label":"People","entries":[{"key":"dc:contributor.advisor","label":"Advisor","values":["Khan, Faisal"]},{"key":"dc:creator","label":"Author","values":["Hanif, Abu"]}]},{"id":"academic_context","label":"Academic Context","entries":[{"key":"dc:date.accessioned","label":"Dc Date Accessioned","values":["2021-05-20T01:06:11Z"]},{"key":"dc:date.available","label":"Dc Date Available","values":["2021-05-20T01:06:11Z"]},{"key":"dc:date.issued","label":"Date","values":["2021"]},{"key":"thesis:degree_discipline","label":"Discipline","values":["Computer Science (UMKC)","Mathematics (UMKC)"]},{"key":"thesis:degree_level","label":"Degree Level","values":["Doctoral"]},{"key":"thesis:degree_name","label":"Degree Name","values":["Ph.D. (Doctor of Philosophy)"]},{"key":"thesis:institution_name","label":"Thesis Institution Name","values":["University of Missouri--Kansas City"]}]},{"id":"identifiers","label":"Identifiers","entries":[{"key":"dc:identifier.uri","label":"Identifier URI","values":["https://hdl.handle.net/10355/83802"]}]},{"id":"additional","label":"Additional Metadata","entries":[{"key":"dc:description","label":"Description","values":["Title from PDF of title page viewed May 24, 2021","Dissertation advisor: Faisal Khan","Vita","Includes bibliographical references (page 124-154)","Thesis (Ph.D.)--School of Computing and Engineering and Department of Mathematics and Statistics, University of Missouri--Kansas City, 2021"]},{"key":"dc:description.abstract","label":"Abstract","values":["High thermal and electrical stress, over a period of time tends to deteriorate the health of power electronic switches. Being a key element in any high-power converter systems, power switches such as insulated-gate bipolar junction transistors (IGBTs) and metal-oxide semiconductor field-effect transistors (MOSFETs) are constantly monitored to predict when and how they might fail. A huge fraction of research efforts involves the study of power electronic device reliability and development of novel techniques with higher accuracy in health estimation of such devices. Until today, no other existing techniques can determine the number of lifted bond wires and their locations in a live IGBT module, although this information is extremely helpful to understand the overall state of health (SOH) of an IGBT power module. Through this research work, two emerging methods for online condition monitoring of power IGBTs and MOSFETs have been proposed. First method is based on reflectometry, more specifically, spread spectrum time domain reflectometry (SSTDR) and second method is based on ultrasound based non-destructive evaluation (NDE). Unlike traditional methods, the proposed methods do not require measuring any electrical parameters (such as voltage or current), therefore, minimizes the measurement error. In addition, both of these methods are independent of the operating points of the converter which makes the application of these methods more feasible for any field application. As part of the research, the RL-equivalent circuit to represent the bond wires of an IGBT module has been developed for the device under test. In addition, an analytical model of ultrasound interaction with the bond wires has been derived in order to efficiently detect the bond wire lift offs within the IGBT power module. Both of these methods are equally applicable to the wide band gap (WBG) power devices and power converters. The successful implementation of these methods creates a provision for condition monitoring (CM) hardware embedded gate driver module which will significantly reduce the overall health monitoring cost."]},{"key":"dc:title","label":"Title","values":["Measuring Level of Degradation in Power Semiconductor Devices using Emerging Techniques"]}]}],"canonical_facts":{"dc:contributor.advisor":["Khan, Faisal"],"dc:creator":["Hanif, Abu"],"dc:date.accessioned":["2021-05-20T01:06:11Z"],"dc:date.available":["2021-05-20T01:06:11Z"],"dc:date.issued":["2021"],"dc:description":["Title from PDF of title page viewed May 24, 2021","Dissertation advisor: Faisal Khan","Vita","Includes bibliographical references (page 124-154)","Thesis (Ph.D.)--School of Computing and Engineering and Department of Mathematics and Statistics, University of Missouri--Kansas City, 2021"],"dc:description.abstract":["High thermal and electrical stress, over a period of time tends to deteriorate the health of power electronic switches. Being a key element in any high-power converter systems, power switches such as insulated-gate bipolar junction transistors (IGBTs) and metal-oxide semiconductor field-effect transistors (MOSFETs) are constantly monitored to predict when and how they might fail. A huge fraction of research efforts involves the study of power electronic device reliability and development of novel techniques with higher accuracy in health estimation of such devices. Until today, no other existing techniques can determine the number of lifted bond wires and their locations in a live IGBT module, although this information is extremely helpful to understand the overall state of health (SOH) of an IGBT power module. Through this research work, two emerging methods for online condition monitoring of power IGBTs and MOSFETs have been proposed. First method is based on reflectometry, more specifically, spread spectrum time domain reflectometry (SSTDR) and second method is based on ultrasound based non-destructive evaluation (NDE). Unlike traditional methods, the proposed methods do not require measuring any electrical parameters (such as voltage or current), therefore, minimizes the measurement error. In addition, both of these methods are independent of the operating points of the converter which makes the application of these methods more feasible for any field application. As part of the research, the RL-equivalent circuit to represent the bond wires of an IGBT module has been developed for the device under test. In addition, an analytical model of ultrasound interaction with the bond wires has been derived in order to efficiently detect the bond wire lift offs within the IGBT power module. Both of these methods are equally applicable to the wide band gap (WBG) power devices and power converters. The successful implementation of these methods creates a provision for condition monitoring (CM) hardware embedded gate driver module which will significantly reduce the overall health monitoring cost."],"dc:identifier.uri":["https://hdl.handle.net/10355/83802"],"dc:title":["Measuring Level of Degradation in Power Semiconductor Devices using Emerging Techniques"],"thesis:degree_discipline":["Computer Science (UMKC)","Mathematics (UMKC)"],"thesis:degree_level":["Doctoral"],"thesis:degree_name":["Ph.D. (Doctor of Philosophy)"],"thesis:institution_name":["University of Missouri--Kansas City"]},"updated_at":"2026-07-24T05:18:34Z"}