Next-Generation Flash Memories Using Two-Dimensional Materials

This thesis presents a model that provides the output characteristics of next-generation flash memories using two-dimensional materials. Multi-Layer Graphene Nanoribbon (MLGNR) and Graphene are used as the channel and floating gate of the device proposed. The current in the channel is calculated using the Poisson-Schrodinger equation; the numerical algorithm is based on the Newton-Raphson (NR) method. A comparative study is done on two different Floating Gate Transistor (FGT) based on the proposed model. Silicon dioxide (SiO₂) and Hafnium dioxide (HfO₂) are the two oxides explored as the top control oxide of the device.

Name thesis:degree_name

M.S.

Level thesis:degree_level

Masters

Discipline thesis:degree_discipline

Electrical Engineering (UMKC)

Grantor dc:publisher

University of Missouri -- Kansas City

Year dc:date.issued

2017

Author dc:creator

• Shishupal, Hemanshu

Advisor dc:contributor.advisor

• Chowdhury, Masud H.

Language dc:language.iso

en_US

Handle dc:identifier.uri

https://hdl.handle.net/10355/66914

OAI identifier oai:identifier

oai:mospace.umsystem.edu:10355/66914