{"id":{"repo_id":"umkc","oai_identifier":"oai:mospace.umsystem.edu:10355/66914"},"canonical_url":"https://search.dev.ndltd.org/etd/umkc/oai:mospace.umsystem.edu:10355/66914","repository":{"repo_id":"umkc","name":"University of Missouri - Kansas City","base_url":"https://mospace.umsystem.edu/oai/request"},"display":{"title":"Next-Generation Flash Memories Using Two-Dimensional Materials","abstract":"This thesis presents a model that provides the output characteristics of next-generation flash memories using two-dimensional materials. Multi-Layer Graphene Nanoribbon (MLGNR) and Graphene are used as the channel and floating gate of the device proposed. The current in the channel is calculated using the Poisson-Schrodinger equation; the numerical algorithm is based on the Newton-Raphson (NR) method. A comparative study is done on two different Floating Gate Transistor (FGT) based on the proposed model. 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Silicon dioxide (SiO₂) and Hafnium dioxide (HfO₂) are the two oxides explored as the top control oxide of the device.","abstract_has_math":false,"creators":["Shishupal, Hemanshu"],"institution":"University of Missouri -- Kansas City","degree_name":"M.S.","degree_level":"Masters","degree_discipline":"Electrical Engineering (UMKC)","degree_department":null,"school":null,"contributors":[],"advisors":["Chowdhury, Masud H."],"committee_chairs":[],"committee_members":[],"year":2017,"date_issued":"2017","date_published":"2017","updated_at":"2026-07-24T05:16:32Z","subjects":[],"languages":["en_US"],"rights":[],"rights_urls":[],"identifier_entries":[]},"links":{"outbound_url":"https://hdl.handle.net/10355/66914","outbound_label":"Handle","outbound_source":"dc:identifier.uri"},"metadata_groups":[{"id":"people","label":"People","entries":[{"key":"dc:contributor.advisor","label":"Advisor","values":["Chowdhury, Masud H."]},{"key":"dc:creator","label":"Author","values":["Shishupal, Hemanshu"]}]},{"id":"academic_context","label":"Academic Context","entries":[{"key":"dc:date.accessioned","label":"Dc Date Accessioned","values":["2019-01-10T17:04:10Z"]},{"key":"dc:date.available","label":"Dc Date Available","values":["2019-01-10T17:04:10Z"]},{"key":"dc:date.issued","label":"Date","values":["2017"]},{"key":"dc:publisher","label":"Institution","values":["University of Missouri -- Kansas City"]},{"key":"dc:type","label":"Dc Type","values":["Thesis"]},{"key":"thesis:degree_discipline","label":"Discipline","values":["Electrical Engineering (UMKC)"]},{"key":"thesis:degree_level","label":"Degree Level","values":["Masters"]},{"key":"thesis:degree_name","label":"Degree Name","values":["M.S."]},{"key":"thesis:institution_name","label":"Thesis Institution Name","values":["University of Missouri--Kansas City"]}]},{"id":"language_rights","label":"Language and Rights","entries":[{"key":"dc:language.iso","label":"Language (ISO)","values":["en_US"]}]},{"id":"identifiers","label":"Identifiers","entries":[{"key":"dc:identifier.uri","label":"Identifier URI","values":["https://hdl.handle.net/10355/66914"]}]},{"id":"additional","label":"Additional Metadata","entries":[{"key":"dc:description","label":"Description","values":["Title from PDF of title page viewed January 11, 2019","Thesis advisor: Masud H. 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Multi-Layer Graphene Nanoribbon (MLGNR) and Graphene are used as the channel and floating gate of the device proposed. The current in the channel is calculated using the Poisson-Schrodinger equation; the numerical algorithm is based on the Newton-Raphson (NR) method. A comparative study is done on two different Floating Gate Transistor (FGT) based on the proposed model. Silicon dioxide (SiO₂) and Hafnium dioxide (HfO₂) are the two oxides explored as the top control oxide of the device."],"dc:identifier.uri":["https://hdl.handle.net/10355/66914"],"dc:language.iso":["en_US"],"dc:publisher":["University of Missouri -- Kansas City"],"dc:title":["Next-Generation Flash Memories Using Two-Dimensional Materials"],"dc:type":["Thesis"],"thesis:degree_discipline":["Electrical Engineering (UMKC)"],"thesis:degree_level":["Masters"],"thesis:degree_name":["M.S."],"thesis:institution_name":["University of Missouri--Kansas City"]},"updated_at":"2026-07-24T05:16:32Z"}