A Study of Newtron Irradiation Effects on Gallium Arsenide Semiconductor Materials

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Name thesis:degree_name

M.S. (master's)

Level thesis:degree_level

Thesis

Discipline thesis:degree_discipline

Nuclear, Plasma, and Radiological Engineering

Year dc:date

2017

Author dc:creator

• Yang, Siyuan

• nuclear engineering
• neutron irradiation effects
• gallium arsenide
• semiconductor materials
• displacement kerma
• n-type GaAs
• neutron fluence
• reciprocal Hall mobility

Statement dc:rights

• Copyright 2009 Chen Xi

Language dc:language

en

Handle dc:identifier

http://hdl.handle.net/2142/96608

OAI identifier oai:identifier

oai:www.ideals.illinois.edu:2142/96608