Growth of epitaxial nanoscale columnar copper indium diselinide thin films by introduction of sodium flouride during growth

The effect of NaF on the growth of CuInSe2 (CIS) epitaxial thin films by a hybrid sputtering and evaporation method was studied. Low levels of NaF deposition during interruptions of epitaxial growth reduced surface roughness. Larger amounts of NaF resulted in columnar epitaxial films with <112> surface facets on the sides of the columns. X-ray diffraction shows all films to be largely epitaxial, with small amounts of (301)-surface-oriented CIS grains present in films with the highest NaF addition. In the columnar films, a buildup of Na was seen near the substrate/film interface, suggesting that Na is buried during columnar growth. I conclude that the Na plays an integral role in the creation of columns in the films based on the dose of Na added during growth. A mechanism for the transition to growth of columns with critical concentrations of NaF is proposed.

Name thesis:degree_name

M.S.

Level thesis:degree_level

Thesis

Discipline thesis:degree_discipline

Materials Science & Engr

Grantor

University of Illinois at Urbana-Champaign

Year dc:date

2016

Author dc:creator

• Kardel, Justin Tynes

Contributors dc:contributor

• Rockett, Angus A.

• CuInSe2 (CIS)
• Copper indium gallium diselinide (CIGS)
• Thin Films
• Epitaxy
• Nanostructures
• Nanowires

Statement dc:rights

• Copyright 2016 Justin Kardel

Language dc:language

en

Handle dc:identifier

http://hdl.handle.net/2142/92674

OAI identifier oai:identifier

oai:www.ideals.illinois.edu:2142/92674