Graphene nano-ribbon and transition metal dichalcogenide field-effect transistor modeling and circuit simulation

This dissertation presents a modeling and simulation study of graphene nano-ribbon and transition metal dichalcogenide field-effect transistors. Through compact modeling, SPICE implementation of the transistors is realized, and circuit-level simulation is enabled. Extensive simulation studies are performed to evaluate the performance of these two emerging devices.

Name thesis:degree_name

Ph.D.

Level thesis:degree_level

Dissertation

Discipline thesis:degree_discipline

Electrical & Computer Engr

Grantor

University of Illinois at Urbana-Champaign

Year dc:date

2015

Author dc:creator

• Chen, Ying-Yu

Contributors dc:contributor

• Chen, Deming
• Li, Xiuling
• Rosenbaum, Elyse
• Wong, Martin D.F.

• graphene
• transition metal dichalcogenide
• transistor
• flexible transistor
• modeling
• simulation

Statement dc:rights

• Copyright 2015 Ying-Yu Chen

Language dc:language

en

Handle dc:identifier

http://hdl.handle.net/2142/88212

OAI identifier oai:identifier

oai:www.ideals.illinois.edu:2142/88212