Part I. Synthesis of Metal Hydroborates as Potential Chemical Vapor Deposition Precursors. Part II. Chemical Vapor Deposition of Titanium-Doped Magnesium Diboride Thin Films

The first low-temperature chemical vapor depositions of doped MgB 2 phases have been achieved by passing the precursor Mg(H3BNMe 2BH3)2 over a surface in the presence of a catalyst that accelerates the rate of the CVD growth reaction. Transition metal hydroborates can serve as effective catalysts, of which Ti(H3BNMe2BH 3)2 is the most attractive so far because it leads to the lowest level of Mg site substitution; the resulting film stoichiometry is Mg0.8Ti0.2B2. Although the metal substitution renders the films non-superconducting above 4 K, the results clearly point the way to the development of technologically-attractive CVD processes to grow superconducting MgB2 thin films at temperatures below 400°C.

Name thesis:degree_name

Ph.D.

Level thesis:degree_level

Dissertation

Discipline thesis:degree_discipline

Chemistry

Grantor

University of Illinois at Urbana-Champaign

Year dc:date

2015

Author dc:creator

• Kim, Do Young

Contributors dc:contributor

• Girolami, Gregory S.

• Engineering, Materials Science

Language dc:language

eng

Identifier

(MiAaPQ)AAI3269943

OAI identifier oai:identifier

oai:www.ideals.illinois.edu:2142/84260