Structure, Stress and Surface Evolution in Silicon Due to Ion Bombardment

In the second part of the work, a new multiscale computational method to study surface evolution is developed. In the new method, called crater function method, an average response of the silicon surface to a single argon impact is computed using molecular dynamics simulations at 500eV beam energies. These average responses (called crater functions) show the presence of ion-stimulated mass rearrangement at the surface in addition to mass removal by sputtering. These crater functions are incorporated into a continuum transport model to study the long-time surface evolution of micrometer-sized targets. These explain experimentally observed surface evolution and long-time amplitude saturation better than existing theoretical models.

Name thesis:degree_name

Ph.D.

Level thesis:degree_level

Dissertation

Discipline thesis:degree_discipline

Mechanical Engineering

Grantor

University of Illinois at Urbana-Champaign

Year dc:date

2015

Author dc:creator

• Kalyanasundaram, Nagarajan

Contributors dc:contributor

• Johnson, Harley T.
• Freund, Jonathan B.

• Engineering, Materials Science

Language dc:language

eng

Identifier

(MiAaPQ)AAI3290266

OAI identifier oai:identifier

oai:www.ideals.illinois.edu:2142/83886