Back to results
University of Illinois at Urbana-Champaign
Microstructure Evolution in Ion -Implanted Aluminum Gallium Arsenide
Abstract
dc:descriptionThe fact that the microstructure changes gradually rather than abruptly as aluminum content is increased suggests that there is a single underlying mechanism responsible for the varied microstructures observed in implanted AlxGa1-xAs. An amorphization model based on the physical and thermal properties of AlxGa1-xAs is presented. The variation of the microstructure with Al content is demonstrated to be a function of the distribution of energetic recoils in the material during implantation.
Degree
thesis:*- Name thesis:degree_name
- Ph.D.
- Level thesis:degree_level
- Dissertation
- Discipline thesis:degree_discipline
- Materials Science and Engineering
- Grantor
- University of Illinois at Urbana-Champaign
- Year dc:date
- 2015
Author and committee
dc:creator, dc:contributor.*- Author dc:creator
-
- Lagow, Benjamin Wilson
- Contributors dc:contributor
-
- Robertson, Ian M.
Subjects
dc:subject × 1Rights
- Language dc:language
- eng
Identifiers
dc:identifier.*- Identifier
- (MiAaPQ)AAI9953069
- OAI identifier oai:identifier
- oai:www.ideals.illinois.edu:2142/82925