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University of Illinois at Urbana-Champaign
Structural and Optical Properties of Gan-Based Heterostructures Grown by Plasma-Assisted Molecular Beam Epitaxy
Abstract
dc:description$\rm Al\sb{0.2}Ga\sb{0.8}$N-GaN MQWs grown by PAMBE demonstrate their feasibility for optical device application. The excitonic transition properties observed from the MQW structures suggest the implementation of very thin, $<$50 A, quantum wells for high efficiency and emission uniformity.
Degree
thesis:*- Name thesis:degree_name
- Ph.D.
- Level thesis:degree_level
- Dissertation
- Discipline thesis:degree_discipline
- Materials Science and Engineering
- Grantor
- University of Illinois at Urbana-Champaign
- Year dc:date
- 2015
Author and committee
dc:creator, dc:contributor.*- Author dc:creator
-
- Shim, Kyu-Hwan
- Contributors dc:contributor
-
- Kim, Kyekyoon
Subjects
dc:subject × 1Rights
- Language dc:language
- eng
Identifiers
dc:identifier.*- Identifier
- (MiAaPQ)AAI9812770
- OAI identifier oai:identifier
- oai:www.ideals.illinois.edu:2142/82897