Deposition and Characterization of Silicon Nitride/gallium Arsenide Metal Insulator Semiconductor Structures With Heteroepitaxial Interlayers

In this thesis, an in-depth study of the growth and characterization of GaAs MIS structures with strained heterointerlayers has been undertaken by exploiting the unique and powerful capabilities of the Epicenter growth and analysis facilities at the University of Illinois. The novel heteroepitaxial interlayers employed between Si$\sb3$N$\sb4$ and GaAs are Si, Si/Ge, Si/Al$\sb{0.3}$Ga$\sb{0.7}$As, Si/GaP, and Si/In$\sb{0.05}$Ga$\sb{0.95}$As. Electrical measurements examining the insulator/semiconductor interface are complemented by in situ analyses such as reflection high electron energy diffraction, scanning tunneling microscopy, and x-ray photoelectron spectroscopy as well as ex situ spectroscopic ellipsometry and high resolution transmission electron microscopy measurements. The culmination of this work is the attainment of an interface trap density near the mid- 10$\sp{10}$ eV$\sp{-1}$ cm$\sp{-2}$ level, which is the lowest values ever reported, on both n- and p-type GaAs MIS structures. This has led to the realization of high transconductance GaAs metal-insulator-semiconductor field-effect transistors (MISFETs) having a maximum transconductance approaching 170 mS/mm.

Name thesis:degree_name

Ph.D.

Level thesis:degree_level

Dissertation

Discipline thesis:degree_discipline

Materials Science and Engineering

Grantor

University of Illinois at Urbana-Champaign

Year dc:date

2015

Author dc:creator

• Park, Dae-Gyu

Contributors dc:contributor

• Morkoc, H.

• Physics, Condensed Matter

Language dc:language

eng

Identifier

(MiAaPQ)AAI9812734

OAI identifier oai:identifier

oai:www.ideals.illinois.edu:2142/82892