Phosphorus Incorporation During Silicon(001):phosphorus Gas-Source Molecular Beam Epitaxy: Effects on Film Growth Kinetics, Surface Morphology, and the Self-Organization of Germanium Quantum Dot Overlays

I build upon these results to understand the effect of growth rate and P predeposition on Ge/Si(001) island geometry, density, and spatial distributions. Ge quantum dots are deposited on three types of starting surfaces: (1) Si(001) buffer layers which serve as a reference, (2) Si(001) layers with predeposited P coverages thetaP ranging from 0 to 1 ML, and (3) P-doped Si(001) with CP = 3.4x1018-8.3x10 18 cm-3, which corresponds to thetaP = 0.5-0.8 ML. Predeposited P passivates and roughens the Si(001) surface, which inhibits surface diffusion and causes an increase in Ge island density and pyramid-to-dome ratio, accompanied by enhanced island self-organization along directions.

Name thesis:degree_name

Ph.D.

Level thesis:degree_level

Dissertation

Discipline thesis:degree_discipline

Materials Science and Engineering

Grantor

University of Illinois at Urbana-Champaign

Year dc:date

2015

Author dc:creator

• Cho, Benjamin

Contributors dc:contributor

• Greene, Joseph E.

• Engineering, Materials Science

Language dc:language

eng

Identifier

(MiAaPQ)AAI3269859

OAI identifier oai:identifier

oai:www.ideals.illinois.edu:2142/82800