Transport in Low Pressure Plasma Reactors for Materials Processing

"Ionized metal physical vapor deposition (IMPVD) at pressures of a few mTorr is being increasingly used to deposit diffusion barriers and Cu seed layers into high aspect ratio trenches. Understanding plasma-substrate interactions will be critical to designing the next generation processes as the industry transitions to the 45-nm node. In this work, IMPVD using a hollow cathode magnetron source has been modeled at the reactor and feature scale. The consequences of varying process parameters such as power, pressure and magnetic fields have been investigated for a hollow cathode magnetron source and comparison has been made with experiments. The fluxes incident on the wafer are strongly influenced by the magnetic field configuration and strength. A Monte Carlo Feature Profile Model has been used to investigate the Cu seed layer deposition process. The lateral overburden at the mouth of features, or ""overhang,"" is strongly correlated to the ion and neutral energy and angular distributions and the ion flux incident on the substrate."

Name thesis:degree_name

Ph.D.

Level thesis:degree_level

Dissertation

Discipline thesis:degree_discipline

Materials Science and Engineering

Grantor

University of Illinois at Urbana-Champaign

Year dc:date

2015

Author dc:creator

• Vyas, Vivek

Contributors dc:contributor

• Kushner, Mark J.

• Engineering, Materials Science

Language dc:language

eng

Identifier

(MiAaPQ)AAI3182409

OAI identifier oai:identifier

oai:www.ideals.illinois.edu:2142/82766