Silicon Carbon(001) Gas-Source Molecular Beam Epitaxy From Methyl Silane and Silicon Hydride: The Effects of Carbon Incorporation and Surface Segregation on Growth Kinetics

At higher growth temperature (725 and 750°C), superlattice structures consisting of alternating Si-rich and C-rich sublayers form spontaneously during the gas-source molecular beam epitaxial growth of Si1-y Cy layers from constant Si2H6 and CH 3SiH3 precursor fluxes. The formation of a self-organized superstructure is due to a complex interaction among competing surface reactions. During growth of the initial Si-rich sublayer, C strongly segregates to the second layer resulting in charge transfer from surface Si atom dangling bonds of to C backbonds. This, in turn, decreases the Si2H6 sticking probability and, hence, the sublayer deposition rate. This continues until a critical C coverage is reached allowing the nucleation and growth of a C-rich sublayer until the excess C is depleted. At this point, the self-organized bilayer process repeats itself.

Name thesis:degree_name

Ph.D.

Level thesis:degree_level

Dissertation

Discipline thesis:degree_discipline

Materials Science and Engineering

Grantor

University of Illinois at Urbana-Champaign

Year dc:date

2015

Author dc:creator

• Foo, Yong-Lim

Contributors dc:contributor

• Greene, Joseph E.

• Engineering, Materials Science

Language dc:language

eng

Identifier

(MiAaPQ)AAI3086062

OAI identifier oai:identifier

oai:www.ideals.illinois.edu:2142/82737