Preparations and Characterizations of Tantalum Pentoxide-Titanium Dioxide: Ceramics and Thin Films

A chemical-solution deposition method was used to integrate thin films of Ta2O5-TiO2 onto silicon substrates. Precursor solutions were successfully prepared using Ta(OEt)5 and Ti(OEt) 4 in ethanol. Solution stability was shown to be influenced by several factors, including, Rw ratio, additions of HCl, and, most importantly, conditions of hydrolysis. Electrical measurements revealed that amorphous films exhibited the most favorable dielectric properties, with low tandelta = 0.005 and K' = 27.

Name thesis:degree_name

Ph.D.

Level thesis:degree_level

Dissertation

Discipline thesis:degree_discipline

Materials Science and Engineering

Grantor

University of Illinois at Urbana-Champaign

Year dc:date

2015

Author dc:creator

• Hemjinda, Sarunya

Contributors dc:contributor

• Payne, David A.

• Engineering, Materials Science

Language dc:language

eng

Identifier

(MiAaPQ)AAI3030436

OAI identifier oai:identifier

oai:www.ideals.illinois.edu:2142/82709