Crystallization of Isolated Amorphous Zones in Semiconductors

Software was developed to detect, measure and track individual amorphous zones throughout a series of irradiation micrographs. Characteristic zone shrinkage behaviors were observed. A simple shrinkage model suggests that the defects responsible for regrowth are created very near the crystalline/amorphous interface. In the sub-threshold electron energy regime, crystallization is thought to be initiated by an electronic excitation which creates a dangling bond pair. By migrating along the crystalline/amorphous interface these dangling bonds are capable of reconstructing to the crystal a large number of atoms through a mechanism similar to that for thermally activated solid phase epitaxial growth.

Name thesis:degree_name

Ph.D.

Level thesis:degree_level

Dissertation

Discipline thesis:degree_discipline

Materials Science and Engineering

Grantor

University of Illinois at Urbana-Champaign

Year dc:date

2015

Author dc:creator

• Hollar, Eric Prater

Contributors dc:contributor

• Robertson, Ian M.

• Engineering, Materials Science

Language dc:language

eng

Identifier

(MiAaPQ)AAI3023075

OAI identifier oai:identifier

oai:www.ideals.illinois.edu:2142/82704