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University of Illinois at Urbana-Champaign
Extraordinary Temperature Amplification in Ion-Stimulated Surface Diffusion
Abstract
dc:descriptionMolecular Dynamic simulation of low-energy noble gas atoms impacting semiconductor surfaces revealed a new, unexpectedly strong tradeoff between the energy threshold for point defect formation and substrate temperature. Experimental measurements of Ge and In surface diffusion on Si(111) by optical second harmonic microscopy (SHM) confirmed major aspects of the predicted temperature amplification. The work may offer a new means for selecting specific rate processes in application such as plasma processing or ion beam assist deposition.
Degree
thesis:*- Name thesis:degree_name
- Ph.D.
- Level thesis:degree_level
- Dissertation
- Discipline thesis:degree_discipline
- Chemical and Biomolecular Engineering
- Grantor
- University of Illinois at Urbana-Champaign
- Year dc:date
- 2015
Author and committee
dc:creator, dc:contributor.*- Author dc:creator
-
- Wang, Zhengguang
- Contributors dc:contributor
-
- Seebauer, Edmund G.
Subjects
dc:subject × 1Rights
- Language dc:language
- eng
Identifiers
dc:identifier.*- Identifier
- (MiAaPQ)AAI3111656
- OAI identifier oai:identifier
- oai:www.ideals.illinois.edu:2142/82361