New Surface and Optically Stimulated Physics for Modeling Diffusion in Silicon

There has long been suspicion that the strong lamp illumination required from RTA may nonthermally influence the diffusion of dopants. Here we describe for the first time the dependence of such effects on temperature and illumination intensity. Experiments employ specialized structures composed of isotopically labeled 30Si tracer atoms in an epitaxial 28Si matrix. Illumination enhanced self-diffusion in n-type Si, but appeared not to influence in p-type Si. Illumination intensity threshold increased with temperature and the trend suggests that even at high RTA temperatures (∼1050°C), lamp illumination may influence not only self-diffusion, but also the diffusion of dopant atoms.

Name thesis:degree_name

Ph.D.

Level thesis:degree_level

Dissertation

Discipline thesis:degree_discipline

Chemical and Biomolecular Engineering

Grantor

University of Illinois at Urbana-Champaign

Year dc:date

2015

Author dc:creator

• Jung, Michael Yoo Lim

Contributors dc:contributor

• Seebauer, Edmund G.

• Engineering, Chemical

Language dc:language

eng

Identifier

(MiAaPQ)AAI3101877

OAI identifier oai:identifier

oai:www.ideals.illinois.edu:2142/82356