Modeling and Control of Transient Enhanced Diffusion of Boron in Silicon

Reducing the junction depth using rapid thermal annealing with high heating rates comes at a cost of increasing sheet resistance. A model-based optimization is formulated to design the optimal annealing temperature program that gives the minimum junction depth while maintaining satisfactory sheet resistance. Comparison of different parameterizations of the optimal trajectories shows that linear profiles give the best combination of minimizing junction depth and sheet resistance. Worst-case robustness analysis of the optimal control trajectory motivates improvements in feedback control instrumentation and strategies for these processes.

Name thesis:degree_name

Ph.D.

Level thesis:degree_level

Dissertation

Discipline thesis:degree_discipline

Chemical Engineering

Grantor

University of Illinois at Urbana-Champaign

Year dc:date

2015

Author dc:creator

• Gunawan, Rudiyanto

Contributors dc:contributor

• Braatz, Richard D.
• Seebauer, Edmund G.

• Engineering, Chemical

Language dc:language

eng

Identifier

(MiAaPQ)AAI3101850

OAI identifier oai:identifier

oai:www.ideals.illinois.edu:2142/82354