Growth and Design of High-Performance InGaP/GaAs Heterojunction Bipolar Transistors Grown by Low -Pressure Metalorganic Chemical Vapor Deposition

Although device physics and semiconductor theory were an essential part of this research, few new theoretical calculations or predictions were made. Rather, this thesis relied heavily on the work of those, who early in the history of semiconductors, developed the theories of minority carrier injection, heterojunction effects, bandgap engineering, and carbon-doping. The work described here is mostly an exercise in applying these theories to produce a manufacturable, high-performance transistor capable of meeting the demands of modern electronics.

Name thesis:degree_name

Ph.D.

Level thesis:degree_level

Dissertation

Discipline thesis:degree_discipline

Electrical Engineering

Grantor

University of Illinois at Urbana-Champaign

Year dc:date

2015

Author dc:creator

• Hartmann, Quesnell Jacob

Contributors dc:contributor

• Stillman, Gregory E.

• Engineering, Electronics and Electrical

Language dc:language

eng

Identifier

(MiAaPQ)AAI9955690

OAI identifier oai:identifier

oai:www.ideals.illinois.edu:2142/81328