Low-Pressure Metalorganic Chemical Vapor Deposition of High-Gain InGaP/GaAs Heterojunction Bipolar Transistors

The impact of the emitter and cap growth conditions on the gain of heterojunction bipolar transistors (HBTs) was studied by annealing to simulate the prolonged growth of HBTs with a heavily carbon-doped base. The results indicate that postgrowth annealing at a temperature close to the growth temperature of the device causes both hydrogen removal from the base and carbon-related defect formation. This effect is caused by the amount of thermal stress applied to the device by either prolonging the anneal or going to a higher temperature. The findings from the annealing study were applied to varying the emitter and cap growth conditions. Data above shows that reducing the cap growth time or temperature can improve the gain of an HBT. Reducing the cap growth temperature is a more efficient way to minimize the self-annealing effect on the base.

Name thesis:degree_name

Ph.D.

Level thesis:degree_level

Dissertation

Discipline thesis:degree_discipline

Electrical Engineering

Grantor

University of Illinois at Urbana-Champaign

Year dc:date

2015

Author dc:creator

• Yang, Qinghong (Jack)

Contributors dc:contributor

• Stillman, Gregory E.

• Engineering, Electronics and Electrical

Language dc:language

eng

Identifier

(MiAaPQ)AAI9945036

OAI identifier oai:identifier

oai:www.ideals.illinois.edu:2142/81300