InP/InGaAs Heterojunction Bipolar Transistors and Field-Effect Transistors Grown by Gas -Source Molecular Beam Epitaxy

Finally, the thermal degradation of heavily C-doped InGaAs and its effects on dc properties of InGaAs/InP HBTs have been studied. The degradation of the junction properties and current gain-base sheet resistance ratio can be attributed to the formation of C precipitates. These findings are important for improving the reliability of C-doped InP/InGaAs HBTs. (Abstract shortened by UMI.).

Name thesis:degree_name

Ph.D.

Level thesis:degree_level

Dissertation

Discipline thesis:degree_discipline

Electrical Engineering

Grantor

University of Illinois at Urbana-Champaign

Year dc:date

2015

Author dc:creator

• Kuo, Hao-Chung

Contributors dc:contributor

• Stillman, G.E.

• Engineering, Materials Science

Language dc:language

eng

Identifier

(MiAaPQ)AAI9944917

OAI identifier oai:identifier

oai:www.ideals.illinois.edu:2142/81294