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University of Illinois at Urbana-Champaign
High-Performance Indium Gallium Phosphide/gallium Arsenide Heterojunction Bipolar Transistors
Abstract
dc:descriptionTo enable the widespread use of InGaP/GaAs HBTs, much research on the fabrication, performance, and characterization of these devices is required. This dissertation will discuss the design and implementation of high-performance InGaP/GaAs HBTs as well as study HBT device physics and characterization.
Degree
thesis:*- Name thesis:degree_name
- Ph.D.
- Level thesis:degree_level
- Dissertation
- Discipline thesis:degree_discipline
- Electrical Engineering
- Grantor
- University of Illinois at Urbana-Champaign
- Year dc:date
- 2015
Author and committee
dc:creator, dc:contributor.*- Author dc:creator
-
- Ahmari, David Abbas
- Contributors dc:contributor
-
- Stillman, Gregory E.
Subjects
dc:subject × 1Rights
- Language dc:language
- eng
Identifiers
dc:identifier.*- Identifier
- (MiAaPQ)AAI9921655
- OAI identifier oai:identifier
- oai:www.ideals.illinois.edu:2142/81277