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University of Illinois at Urbana-Champaign

Investigation of the Interface Recombination Velocity of Native Oxide/iii-V Semiconductor Interfaces

Abstract

dc:description

The activation energy of the IRV was extracted from variable temperature TRPL measurements performed on selected samples. The activation energies of the interface recombination velocities agreed with previously established results on unoxidized material interfaces.

Degree

thesis:*
Name thesis:degree_name
Ph.D.
Level thesis:degree_level
Dissertation
Discipline thesis:degree_discipline
Electrical Engineering
Grantor
University of Illinois at Urbana-Champaign
Year dc:date
2015

Author and committee

dc:creator, dc:contributor.*
Author dc:creator
  • Curtis, Anthony Paul
Contributors dc:contributor
  • Stillman, Gregory E.

Subjects

dc:subject × 1

Rights

Language dc:language
eng

Identifiers

dc:identifier.*
Identifier
(MiAaPQ)AAI9904427
OAI identifier oai:identifier
oai:www.ideals.illinois.edu:2142/81239

Chain of custody

source
Harvested from
University of Illinois - Urbana-Champaign
Base URL
www.ideals.illinois.edu/oai-pmh
Last updated
2026-07-22
Source record
OAI-PMH GetRecord
citation

Curtis, Anthony Paul. Investigation of the Interface Recombination Velocity of Native Oxide/iii-V Semiconductor Interfaces. Dissertation thesis, University of Illinois at Urbana-Champaign, 2015. http://hdl.handle.net/2142/81239