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University of Illinois at Urbana-Champaign
Fabrication of Gallium Indium Arsenide Phosphide Quantum Wire Heterostructures for Optoelectronic Applications
Abstract
dc:descriptionThermal annealing techniques were also applied to QWRs. After this treatment, emissions were found to be at a higher energy than the as-grown samples, attributed to the disordering of the lateral composition modulation which, in effect, raised the bandgap energy of the QWR material. In addition, annealing was also found to reduce the magnitude but maintain the direction of a red-shift in emission wavelength with cooling measurement temperature. This thermal treatment served to be a useful tool in engineering the emission wavelength from a QWR sample from 1.6 to 1.55 mm.
Degree
thesis:*- Name thesis:degree_name
- Ph.D.
- Level thesis:degree_level
- Dissertation
- Discipline thesis:degree_discipline
- Electrical Engineering
- Grantor
- University of Illinois at Urbana-Champaign
- Year dc:date
- 2015
Author and committee
dc:creator, dc:contributor.*- Author dc:creator
-
- Moy, Aaron M.
- Contributors dc:contributor
-
- Cheng, K.Y.
Subjects
dc:subject × 1Rights
- Language dc:language
- eng
Identifiers
dc:identifier.*- Identifier
- (MiAaPQ)AAI9812714
- OAI identifier oai:identifier
- oai:www.ideals.illinois.edu:2142/81217