University of Illinois at Urbana-Champaign
Modeling of In(0.49)Ga(0.51)P/GaAs Heterojunction Bipolar Transistors for ADC and MMIC Circuit Design
Abstract
dc:descriptionState-of-the-art monolithic Ka-band voltage-controlled oscillators were designed, tested and fabricated. Power output was $>$5 dBm and the phase noise was $<$90 dBc/Hz at 100 kHz. The phase noise and output power are also tested vs. the ambient temperature of the oscillator. Another design is presented that exhibits a tuning range of 2 GHz. The initial design procedure is described in detail. Several monolithic varactors are empirically assessed for their contribution to the phase noise. Preliminary results for coplanar resonator structures are presented. These are presented as a means to enhance the frequency stability of the circuit. Design architectures based on the resonator structure are presented. In addition, to improve the tuning range of the state-of-the-art oscillator, several wave-guide lengths were adjusted. These are included as well.
Degree
thesis:*- Name thesis:degree_name
- Ph.D.
- Level thesis:degree_level
- Dissertation
- Discipline thesis:degree_discipline
- Electrical Engineering
- Grantor
- University of Illinois at Urbana-Champaign
- Year dc:date
- 2015
Author and committee
dc:creator, dc:contributor.*- Author dc:creator
-
- Barlage, Douglas William
- Contributors dc:contributor
-
- Feng, Milton
Subjects
dc:subject × 1Rights
- Language dc:language
- eng
Identifiers
dc:identifier.*- Identifier
- (MiAaPQ)AAI9812526
- OAI identifier oai:identifier
- oai:www.ideals.illinois.edu:2142/81199