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University of Illinois at Urbana-Champaign

Selective Oxidation of Aluminum-Bearing Iii-V Semiconductors: Properties and Applications to Small-Volume Quantum Well Heterostructure Lasers

Abstract

dc:description

"The same IILD + oxidation process is used to fabricate a two-dimensional active photonic lattice that is comprised of $\sim$9-μm microdisk lasers that are arranged in a triangular (hexagonal close-packed) lattice arrangement. The disks are closely spaced (11-μm center-to-center spacing) such that they are strongly coupled. As a result of the coupling of the disks, the photonic lattice exhibits laser operation in bands of energy located around the microdisk modes. In addition, the photonic lattice emits beams of energy along six symmetrical ""crystal"" directions. The details of photonic lattice fabrication and characterization are described."

Degree

thesis:*
Name thesis:degree_name
Ph.D.
Level thesis:degree_level
Dissertation
Discipline thesis:degree_discipline
Electrical Engineering
Grantor
University of Illinois at Urbana-Champaign
Year dc:date
2015

Author and committee

dc:creator, dc:contributor.*
Author dc:creator
  • Ries, Michael John
Contributors dc:contributor
  • Holonyak, Nick, Jr.

Subjects

dc:subject × 1

Rights

Language dc:language
eng

Identifiers

dc:identifier.*
Identifier
(MiAaPQ)AAI9702653
OAI identifier oai:identifier
oai:www.ideals.illinois.edu:2142/81167

Chain of custody

source
Harvested from
University of Illinois - Urbana-Champaign
Base URL
www.ideals.illinois.edu/oai-pmh
Last updated
2026-07-22
Source record
OAI-PMH GetRecord
citation

Ries, Michael John. Selective Oxidation of Aluminum-Bearing Iii-V Semiconductors: Properties and Applications to Small-Volume Quantum Well Heterostructure Lasers. Dissertation thesis, University of Illinois at Urbana-Champaign, 2015. http://hdl.handle.net/2142/81167