Design, Fabrication, and Modeling of Indium Phosphide Double-Heterojunction Bipolar Transistors With Sub-Millimeter Wave Cutoff Frequency

The subject of this work is the design and fabrication of heterojunction bipolar transistors based on InP and the III-V compounds compatible with epitaxial growth on this substrate. Scaling and compositional variations of the transistor material layers are studied with the goal of improving device bandwidth. The cutoff frequencies of double-heterojunction transistors are extended as high as 690 GHz while maintaining an off-state breakdown voltage greater than 3 V by using the InP/GaAsSb material system with a type-II energy band alignment. Chapter 1 of this work gives an overview of the relevant materials and device parameters. Material structure design and vertical scaling are discussed in Chapter 2. In Chapter 3, lateral process scaling and the sub-micron HBT fabrication process are presented. Chapter 4 details the material designs studied and the measured device results including sub-micron HBTs with record RF performance. Chapter 5 presents small-signal parameter extraction and modeling work. Future work in device design and fabrication is proposed in Chapter 6.

Name thesis:degree_name

Ph.D.

Level thesis:degree_level

Dissertation

Discipline thesis:degree_discipline

Electrical and Computer Engineering

Grantor

University of Illinois at Urbana-Champaign

Year dc:date

2015

Author dc:creator

• Snodgrass, William K.

Contributors dc:contributor

• Feng, Milton

• Engineering, Electronics and Electrical

Language dc:language

eng

Identifier

(MiAaPQ)AAI3392479

OAI identifier oai:identifier

oai:www.ideals.illinois.edu:2142/81150