Methodologies for Broadband Electromagnetic Modeling of on-Chip Semiconductor Substrate Noise

For a full-wave modeling of the substrate coupling problem the thesis elaborates on a number of features for the time domain finite integration technique (FIT), a volumetric discretization scheme, aimed at improving its computational performance for the type of geometrical characteristics encountered in substrate coupling problems on-chip. Along these lines, the implicit Newmark-beta scheme is proposed as the time-marching scheme to overcome the severe restrictions on the maximum stable time step imposed by stability constraints to the more frequently used explicit leapfrog scheme. Furthermore, a previously proposed FDTD subgridding scheme, based on a finite element method (FEM) formalism, has been reformulated and adapted to work within the FIT framework. One important element of the presented subgridding scheme is that it maintains the transpose property between the discrete curl operators for electric and magnetic fields. This is a key ingredient for the implementation of a global discrete system that is energy conserving, consistent with the modeled continuous problem; hence any subgridding induced, late time instabilities are avoided.

Name thesis:degree_name

Ph.D.

Level thesis:degree_level

Dissertation

Discipline thesis:degree_discipline

Electrical and Computer Engineering

Grantor

University of Illinois at Urbana-Champaign

Year dc:date

2015

Author dc:creator

• Manetas, George

Contributors dc:contributor

• Cangellaris, Andreas C.

• Engineering, Electronics and Electrical

Language dc:language

eng

Identifier

(MiAaPQ)AAI3392208

OAI identifier oai:identifier

oai:www.ideals.illinois.edu:2142/81144