Process Development for Aluminum Gallium Nitride-Based Enhancement- and Depletion -Mode HEMTs

This dissertation documents the development of high-performance gate-recessed HEMTs in the AlGaN-GaN material system. The primary goal of the dissertation research is the development of processes that are suitable for fabrication of AlGaN/GaN HEMTs with precise threshold voltage control for both enhancement- and depletion-mode operation. The specific areas of research include controllable and low-damage gate-recess etching, damage-removing annealing processes, and metal structures for Schottky gate contacts. Both E-HEMTs and D-HEMTs are made in order to study the effect of recess etching, post-etch annealing, and post gate annealing processes on device characteristics.

Name thesis:degree_name

Ph.D.

Level thesis:degree_level

Dissertation

Discipline thesis:degree_discipline

Electrical and Computer Engineering

Grantor

University of Illinois at Urbana-Champaign

Year dc:date

2015

Author dc:creator

• Lanford, William B.

Contributors dc:contributor

• I. Adesida

• Engineering, Electronics and Electrical

Language dc:language

eng

Identifier

(MiAaPQ)AAI3242909

OAI identifier oai:identifier

oai:www.ideals.illinois.edu:2142/80978