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University of Illinois at Urbana-Champaign

High-Speed Silicon-Germanium BiCMOS and Indium Phosphide DHBT Receiver ICs for Optical and Wireless Communications

Abstract

dc:description

Finally, three different types of active inductors and their applications to VCOs (AIVCOs) and low-pass filters were designed and fabricated with the SiGe and InP processes. The InP AIVCOs demonstrate 20-GHz oscillation frequency and over 50% tuning range. The measured do power for a single InP active inductor is only 15 mW from a 4-V power supply.

Degree

thesis:*
Name thesis:degree_name
Ph.D.
Level thesis:degree_level
Dissertation
Discipline thesis:degree_discipline
Electrical Engineering
Grantor
University of Illinois at Urbana-Champaign
Year dc:date
2015

Author and committee

dc:creator, dc:contributor.*
Author dc:creator
  • He, Qiurong
Contributors dc:contributor
  • Feng, Milton

Subjects

dc:subject × 1

Rights

Language dc:language
eng

Identifiers

dc:identifier.*
Identifier
(MiAaPQ)AAI3199016
OAI identifier oai:identifier
oai:www.ideals.illinois.edu:2142/80923

Chain of custody

source
Harvested from
University of Illinois - Urbana-Champaign
Base URL
www.ideals.illinois.edu/oai-pmh
Last updated
2026-07-22
Source record
OAI-PMH GetRecord
citation

He, Qiurong. High-Speed Silicon-Germanium BiCMOS and Indium Phosphide DHBT Receiver ICs for Optical and Wireless Communications. Dissertation thesis, University of Illinois at Urbana-Champaign, 2015. http://hdl.handle.net/2142/80923