Back to results
University of Illinois at Urbana-Champaign
Ohmic Contacts to N -Type Gallium Nitride Based Semiconductors
Abstract
dc:descriptionIn this work, the development and characterization of electrical and materials performance of ohmic contacts are presented. Surface treatment techniques were developed to improve the electrical characteristics of ohmic contacts. Ti/Al/Mo/Au metallization scheme was developed to form ohmic contacts to n-GaN, n-AlxGa1-xN, and AlGaN/GaN HEMTs. Materials microstructural analysis techniques were used to understand the evolution of electrical behavior of these contacts at higher temperatures.
Degree
thesis:*- Name thesis:degree_name
- Ph.D.
- Level thesis:degree_level
- Dissertation
- Discipline thesis:degree_discipline
- Electrical Engineering
- Grantor
- University of Illinois at Urbana-Champaign
- Year dc:date
- 2015
Author and committee
dc:creator, dc:contributor.*- Author dc:creator
-
- Selvanathan, Deepak
- Contributors dc:contributor
-
- Adesida, Ilesanmi
Subjects
dc:subject × 1Rights
- Language dc:language
- eng
Identifiers
dc:identifier.*- Identifier
- (MiAaPQ)AAI3131020
- OAI identifier oai:identifier
- oai:www.ideals.illinois.edu:2142/80864