Wafer Bonding With Low-Temperature Grown Compound Semiconductor Materials for Optoelectronic Device Application

Finally, I developed two methods to transfer a GaAs-based device layer on a transparent GaP substrate (for emission wavelength longer than 560 nm), which involve multiple processing techniques. One approach also includes the regrowth step, which further indicates the bonded sample can further be processed at high temperatures.

Name thesis:degree_name

Ph.D.

Level thesis:degree_level

Dissertation

Discipline thesis:degree_discipline

Electrical Engineering

Grantor

University of Illinois at Urbana-Champaign

Year dc:date

2015

Author dc:creator

• Chang, Kuo-Lih

Contributors dc:contributor

• Hsieh, K.C.

• Engineering, Materials Science

Language dc:language

eng

Identifier

(MiAaPQ)AAI3111669

OAI identifier oai:identifier

oai:www.ideals.illinois.edu:2142/80851