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University of Illinois at Urbana-Champaign
Growth of Gallium Nitride-Based Nitride Semiconductors by PAMBE for Development of Optoelectronic and Microelectronic Devices
Abstract
dc:descriptionSeveral devices, i.e., homo junction light-emitting diode (HJ LED), multi-quantum well (MQW) LED, and buried gate junction field effect transistor (BGJFET), are fabricated by PAMBE and their characteristics are demonstrated to show the high quality of GaN-based nitride films grown by PAMBE.
Degree
thesis:*- Name thesis:degree_name
- Ph.D.
- Level thesis:degree_level
- Dissertation
- Discipline thesis:degree_discipline
- Electrical Engineering
- Grantor
- University of Illinois at Urbana-Champaign
- Year dc:date
- 2015
Author and committee
dc:creator, dc:contributor.*- Author dc:creator
-
- Rhee, Seunghun
- Contributors dc:contributor
-
- Kim, Kyekyoon
Subjects
dc:subject × 1Rights
- Language dc:language
- eng
Identifiers
dc:identifier.*- Identifier
- (MiAaPQ)AAI3101954
- OAI identifier oai:identifier
- oai:www.ideals.illinois.edu:2142/80840