Computer Modeling of Silicon Quantum Dot Floating -Gate Flash Memory Devices

The operation of silicon quantum-dot based flash memory devices are simulated numerically with emphasis on energy and charge quantization in the quantum-dot. The simulation involves the self-consistent solution of three-dimensional (3-D) Poisson and Kohn-Sham equations within the density functional formalism, where the quantum many-body interactions are treated according to the local-density approximation. We investigate the quantum-dot electronic structure, device capacitance-voltage characteristics and derive the threshold voltage, VT, variation with single-electron charging as a function of design parameters. In the simulation of a single rectangular quantum-dot floating gate, we focus on the effects on the wrap-gate on the onset of inversion and analyzed the influence of the extent of the control gate overlap on the charging behavior of the device. We have also investigated the operation of the nano-crystal memory. We show that the unique combination of symmetries in the band-structure and the nano-crystal geometry can produce interesting stark effect. The effects of geometry and strain, based on the continuum strain approach and the deformation potential theory, on single-electron charging in 100A-diameter nano-crystals of various shapes has been simulated.

Name thesis:degree_name

Ph.D.

Level thesis:degree_level

Dissertation

Discipline thesis:degree_discipline

Electrical Engineering

Grantor

University of Illinois at Urbana-Champaign

Year dc:date

2015

Author dc:creator

• Thean, Voon-Yew Aaron

Contributors dc:contributor

• Leburton, Jean-Pierre

• Engineering, Electronics and Electrical

Language dc:language

eng

Identifier

(MiAaPQ)AAI3023214

OAI identifier oai:identifier

oai:www.ideals.illinois.edu:2142/80741