Back to results
University of Illinois at Urbana-Champaign
Development of Direct Ion -Implanted Gallium Arsenide MESFET and Low-Actuation-Voltage RF MEM Switches
Abstract
dc:descriptionThe high-performance GaAs MESFETs will provide a solution to low-cost NMCs, and the circuit results justify the readiness of this technology in Ka-band and V-band applications. The low operation-voltage switches will facilitate the direct integration with current MMICs and provide a solution to broadband reconfigurable circuits. The mature GaAs MESFET technology integrated with RF MEM switches will have a direct impact on RF circuit applications in the future.
Degree
thesis:*- Name thesis:degree_name
- Ph.D.
- Level thesis:degree_level
- Dissertation
- Discipline thesis:degree_discipline
- Electrical Engineering
- Grantor
- University of Illinois at Urbana-Champaign
- Year dc:date
- 2015
Author and committee
dc:creator, dc:contributor.*- Author dc:creator
-
- Shen, Shyh-Chiang
- Contributors dc:contributor
-
- Feng, Milton
Subjects
dc:subject × 1Rights
- Language dc:language
- eng
Identifiers
dc:identifier.*- Identifier
- (MiAaPQ)AAI3023195
- OAI identifier oai:identifier
- oai:www.ideals.illinois.edu:2142/80739