Small -Signal Distributed FET Modeling

This dissertation focuses on developing a distributed field-effect transistor (FET) small-signal model that is accurate from do to 110 GHz for a wide range of bias conditions. The distributed model is intended to be compatible with a large-signal implementation. The distributed model performance is compared with that of a standard lumped-element model. Skin effect in the gate conductor is analyzed. High-frequency measurement issues are also discussed.

Name thesis:degree_name

Ph.D.

Level thesis:degree_level

Dissertation

Discipline thesis:degree_discipline

Electrical Engineering

Grantor

University of Illinois at Urbana-Champaign

Year dc:date

2015

Author dc:creator

• Caruth, David Charles

Contributors dc:contributor

• Feng, Milton

• Engineering, Electronics and Electrical

Language dc:language

eng

Identifier

(MiAaPQ)AAI3023028

OAI identifier oai:identifier

oai:www.ideals.illinois.edu:2142/80727