Computational Approaches to Silicon-Based Nanostructures

Finally, a full-band approach for the solution of Schrodinger's equation based on Fast Fourier Transforms is described. Using this simulation method, it becomes possible to solve Schrodinger's equation in the one band approximation for arbitrary band structures, putting a more complete description of high energy states and realistic temperatures within reach. Two example applications concerning non-parabolic effects in silicon quantum structures are presented, a MOS quantum capacitor and a MOS quantum cavity. Future directions for further extending this numerical method are discussed.

Name thesis:degree_name

Ph.D.

Level thesis:degree_level

Dissertation

Discipline thesis:degree_discipline

Physics

Grantor

University of Illinois at Urbana-Champaign

Year dc:date

2015

Author dc:creator

• Trellakis, Alexandros

Contributors dc:contributor

• Ravaioli, Umberto

• Physics, Condensed Matter

Language dc:language

eng

Identifier

(MiAaPQ)AAI9971207

OAI identifier oai:identifier

oai:www.ideals.illinois.edu:2142/80683