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University of Illinois at Urbana-Champaign

Planar Tunneling Spectroscopy of Thin-Film Niobium, Niobium/normal Metal and Niobium/semicondutor Structures

Abstract

dc:description

The superconductor-semiconductor study was performed on Nb-InGaAs bilayers. The Schottky barrier formed at the interface between these two materials was utilized as a tunneling barrier. A method was developed to fabricate small area junctions. The tunneling conductance as a function of semiconductor properties and sample temperature have been found to be consistent with results reported in the literature.

Degree

thesis:*
Name thesis:degree_name
Ph.D.
Level thesis:degree_level
Dissertation
Discipline thesis:degree_discipline
Physics
Grantor
University of Illinois at Urbana-Champaign
Year dc:date
2015

Author and committee

dc:creator, dc:contributor.*
Author dc:creator
  • Abeyta, Adam Christopher
Contributors dc:contributor
  • Greene, Laura H.

Subjects

dc:subject × 1

Rights

Language dc:language
eng

Identifiers

dc:identifier.*
Identifier
(MiAaPQ)AAI9971007
OAI identifier oai:identifier
oai:www.ideals.illinois.edu:2142/80680

Chain of custody

source
Harvested from
University of Illinois - Urbana-Champaign
Base URL
www.ideals.illinois.edu/oai-pmh
Last updated
2026-07-22
Source record
OAI-PMH GetRecord
citation

Abeyta, Adam Christopher. Planar Tunneling Spectroscopy of Thin-Film Niobium, Niobium/normal Metal and Niobium/semicondutor Structures. Dissertation thesis, University of Illinois at Urbana-Champaign, 2015. http://hdl.handle.net/2142/80680