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University of Illinois at Urbana-Champaign

Electronic and Optical Properties of Silicon Based Semiconductors With Reduced Dimension: A Theoretical Study

Abstract

dc:description

In this work, we have successfully studied silicon surface, phosphorus delta-doped silicon, and Hydrogen passivated silicon clusters. To study the systems efficiently, we have developed planar Wannier formula with envelope functions, and GWA formula in symmetrized plane-wave basis. The formulas are successfully applied to the studied materials. Moreover, the methods can be used to study other nano-materials.

Degree

thesis:*
Name thesis:degree_name
Ph.D.
Level thesis:degree_level
Dissertation
Discipline thesis:degree_discipline
Physics
Grantor
University of Illinois at Urbana-Champaign
Year dc:date
2015

Author and committee

dc:creator, dc:contributor.*
Author dc:creator
  • Qian, Gefei
Contributors dc:contributor
  • Chang, Yia-Chung

Subjects

dc:subject × 1

Rights

Language dc:language
eng

Identifiers

dc:identifier.*
Identifier
(MiAaPQ)AAI3242966
OAI identifier oai:identifier
oai:www.ideals.illinois.edu:2142/80539

Chain of custody

source
Harvested from
University of Illinois - Urbana-Champaign
Base URL
www.ideals.illinois.edu/oai-pmh
Last updated
2026-07-22
Source record
OAI-PMH GetRecord
citation

Qian, Gefei. Electronic and Optical Properties of Silicon Based Semiconductors With Reduced Dimension: A Theoretical Study. Dissertation thesis, University of Illinois at Urbana-Champaign, 2015. http://hdl.handle.net/2142/80539