Fluctuating and Phase -Stiff Proximity-Induced Superconductivity in Superconductor-Semiconductor Junctions

Results from transport measurements made on Nb/InGaAs heterojunctions show evidence of strong coupling across the superconductor-semiconductor interface. A novel 3-Terminal device geometry allows the simultaneous extraction of the specific contact conductance and the 2D sheet resistance in the semiconductor nearby the junction interface. A transition from fluctuating to phase-stiff proximity induced superconductivity is observed in the semiconductor at temperatures often well below the transition temperature of the superconductor. This phenomenological interpretation is supported by the fact that the enhancement observed in the specific contact conductance is too large (greater than a factor of two) to be explained by simple Andreev reflection. Significant and abrupt changes in the semiconductor's 2D sheet resistance also suggest phenomenology beyond simple boundary effects.

Name thesis:degree_name

Ph.D.

Level thesis:degree_level

Dissertation

Discipline thesis:degree_discipline

Physics

Grantor

University of Illinois at Urbana-Champaign

Year dc:date

2015

Author dc:creator

• Flexner, Soren Daniel

Contributors dc:contributor

• Eckstein, James N.

• Physics, Condensed Matter

Language dc:language

eng

Identifier

(MiAaPQ)AAI3223589

OAI identifier oai:identifier

oai:www.ideals.illinois.edu:2142/80530