X -Ray Studies of Metal Thin Film Growth on Semiconductors

X-ray reflectivity measurements have been performed for an investigation of the structure of Ag films deposited in situ on Ge(111) over the thickness range of 3--15 monolayers. The films deposited at a substrate temperature of 110 K are not well ordered, but become well ordered upon annealing, as evidenced by substantial changes in the x-ray reflectivity data. The thickness distribution for each annealed film, deduced from a fit to the reflectivity data, is remarkably narrow, with just two or three adjacent discrete thicknesses present, despite the large lattice mismatch between Ag and Ge. In some cases, the film thickness is nearly atomically uniform. The results are discussed in connection with recent models and theories of electronic effects on the growth of ultrathin metal films.

Name thesis:degree_name

Ph.D.

Level thesis:degree_level

Dissertation

Discipline thesis:degree_discipline

Physics

Grantor

University of Illinois at Urbana-Champaign

Year dc:date

2015

Author dc:creator

• Basile, Leonardo A.

Contributors dc:contributor

• Chiang, Tai-Chang

• Physics, Condensed Matter

Language dc:language

eng

Identifier

(MiAaPQ)AAI3182221

OAI identifier oai:identifier

oai:www.ideals.illinois.edu:2142/80510