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University of Illinois at Urbana-Champaign
Studies of Field -Induced Stress on Ultrathin Layers of Silicon Dioxide on a Silicon Substrate
Abstract
dc:descriptionWe present here the results of an STM study of ultrathin silicon dioxide layers on a silicon substrate. We have found that under certain conditions, structures subjected to field-induced stress with the STM exhibit changes in their conductivity which we believe are evident in the images as the voltage of the STM is varied. We focus here on that subset of field stress parameters yielding structures which specifically exhibit this conductivity change.
Degree
thesis:*- Name thesis:degree_name
- Ph.D.
- Level thesis:degree_level
- Dissertation
- Discipline thesis:degree_discipline
- Physics
- Grantor
- University of Illinois at Urbana-Champaign
- Year dc:date
- 2015
Author and committee
dc:creator, dc:contributor.*- Author dc:creator
-
- Archer, Allan Phillip
- Contributors dc:contributor
-
- Nayfeh, Munir H.
Subjects
dc:subject × 1Rights
- Language dc:language
- eng
Identifiers
dc:identifier.*- Identifier
- (MiAaPQ)AAI3017014
- OAI identifier oai:identifier
- oai:www.ideals.illinois.edu:2142/80459