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University of Illinois at Urbana-Champaign

Studies of Field -Induced Stress on Ultrathin Layers of Silicon Dioxide on a Silicon Substrate

Abstract

dc:description

We present here the results of an STM study of ultrathin silicon dioxide layers on a silicon substrate. We have found that under certain conditions, structures subjected to field-induced stress with the STM exhibit changes in their conductivity which we believe are evident in the images as the voltage of the STM is varied. We focus here on that subset of field stress parameters yielding structures which specifically exhibit this conductivity change.

Degree

thesis:*
Name thesis:degree_name
Ph.D.
Level thesis:degree_level
Dissertation
Discipline thesis:degree_discipline
Physics
Grantor
University of Illinois at Urbana-Champaign
Year dc:date
2015

Author and committee

dc:creator, dc:contributor.*
Author dc:creator
  • Archer, Allan Phillip
Contributors dc:contributor
  • Nayfeh, Munir H.

Subjects

dc:subject × 1

Rights

Language dc:language
eng

Identifiers

dc:identifier.*
Identifier
(MiAaPQ)AAI3017014
OAI identifier oai:identifier
oai:www.ideals.illinois.edu:2142/80459

Chain of custody

source
Harvested from
University of Illinois - Urbana-Champaign
Base URL
www.ideals.illinois.edu/oai-pmh
Last updated
2026-07-22
Source record
OAI-PMH GetRecord
citation

Archer, Allan Phillip. Studies of Field -Induced Stress on Ultrathin Layers of Silicon Dioxide on a Silicon Substrate. Dissertation thesis, University of Illinois at Urbana-Champaign, 2015. http://hdl.handle.net/2142/80459