Nanolithographically defined semiconductor quantum dots

In this thesis,nanolithographically de ned quantum dots are discussed including their fabrication process and optical properties. First, an introduction to the eld of quantum dots (QDs), and the advantages of QD-based optoelectronic devices are provided. The research presents our recent work demonstrating carrier con nement in quantum nanostructures fabricated from epitaxially grown quantum wells (QWs) using a top-down nanosphere lithography, dry-etch and overgrowth fabrication process. Devices are characterized by a current density-voltage (JV) test, electroluminescence (EL) and photoluminescence (PL) spectroscopy. The quantum confi nement is simulated by COMSOL.

Name thesis:degree_name

M.S.

Level thesis:degree_level

Thesis

Discipline thesis:degree_discipline

Electrical & Computer Engr

Grantor

University of Illinois at Urbana-Champaign

Year dc:date

2015

Author dc:creator

• Yu, Lan

Contributors dc:contributor

• Wasserman, Daniel M.

• III-V Semiconductor
• Light-emitting diode (LED)
• Quantum dots

Statement dc:rights

• Copyright 2015 Lan Yu

Handle dc:identifier

http://hdl.handle.net/2142/78307

OAI identifier oai:identifier

oai:www.ideals.illinois.edu:2142/78307