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University of Illinois at Urbana-Champaign
Low Temperature Electron Irradiation Induced Defects in Gallium-Arsenide: Bulk and Surface Acoustic Wave Studies
Abstract
dc:descriptionIrradiation of GaAs with 2.25 - 2.5 MeV electrons at temperatures below 190 K produces two peaks in ultrasonic attenuation versus temperature. The defects responsible for both peaks have trigonal symmetry and were observed in n-type and semi-insulating GaAs with bulk and surface acoustic waves (SAW) respectively. Bulk waves at eight frequencies between 9 and 130 MHz and SAW at 73 and 145 MHz were used. The reorientation kinetics of both peaks follow the Arrhenius law.
Degree
thesis:*- Name thesis:degree_name
- Ph.D.
- Level thesis:degree_level
- Dissertation
- Discipline thesis:degree_discipline
- Physics
- Grantor
- University of Illinois at Urbana-Champaign
- Year dc:date
- 2015
Author and committee
dc:creator, dc:contributor.*- Author dc:creator
-
- Brophy, Martin Joseph, Jr.
Subjects
dc:subject × 1Rights
- Language dc:language
- eng
Identifiers
dc:identifier.*- Identifier
- (UMI)AAI8511585
- OAI identifier oai:identifier
- oai:www.ideals.illinois.edu:2142/77376