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University of Illinois at Urbana-Champaign

X-Ray Generation by Mev Electrons in Silicon: Temperature, Tilt and Thickness Dependence

Abstract

dc:description

When relativistic electrons strike a single crystal target, sharp peaks are observed in the x-ray spectrum generated. One type of radiation, called coherent bremsstrahlung, results from coherent electron scattering by atoms arranged on the crystal lattice. The other type of radiation is channeling radiation. The electrons channeling near major crystal axes enter quantized orbits and emit x-ray photons as a consequence of transitions between orbits.

Degree

thesis:*
Name thesis:degree_name
Ph.D.
Level thesis:degree_level
Dissertation
Discipline thesis:degree_discipline
Physics
Grantor
University of Illinois at Urbana-Champaign
Year dc:date
2015

Author and committee

dc:creator, dc:contributor.*
Author dc:creator
  • Kozlowski, Robert Edward

Subjects

dc:subject × 1

Rights

Language dc:language
eng

Identifiers

dc:identifier.*
Identifier
(UMI)AAI8218501
OAI identifier oai:identifier
oai:www.ideals.illinois.edu:2142/77346

Chain of custody

source
Harvested from
University of Illinois - Urbana-Champaign
Base URL
www.ideals.illinois.edu/oai-pmh
Last updated
2026-07-22
Source record
OAI-PMH GetRecord
citation

Kozlowski, Robert Edward. X-Ray Generation by Mev Electrons in Silicon: Temperature, Tilt and Thickness Dependence. Dissertation thesis, University of Illinois at Urbana-Champaign, 2015. http://hdl.handle.net/2142/77346