Graphene etch mask for silicon

In this thesis, an alternative future use for graphene will be explored. Graphene, a popular two-dimensional material of remarkable electrical properties, has been thought to be a successor to current day microelectronic materials. With the many challenges posed by the manufacture of conventional devices from graphene, other adaptations for its properties are sought in the work that follows. Chiefly, its mechanical and chemical strength as an etch mask for silicon is tested.We attempt to present the progress toward a working model of a graphene etch mask. The influence of the mask geometry, etch method, etch conditions, substrate quality and other factors will be explored to present a clear understanding of methodology and requirements for carrying out the process. Along the way, other aspects of the project such as the growth and transfer of graphene, which are not the focus but extremely crucial to the results, will be elucidated as required. Possible future directions will also be presented to provide a notion of where the idea can head.

Name thesis:degree_name

M.S.

Level thesis:degree_level

Thesis

Discipline thesis:degree_discipline

Electrical & Computer Engr

Grantor

University of Illinois at Urbana-Champaign

Year dc:date

2015

Author dc:creator

• Rangarajan, Aniruddh

Contributors dc:contributor

• Lyding, Joseph W.

• graphene
• etch mask
• silicon
• nano-fabrication
• xenon difluoride
• reactive ion etch

Statement dc:rights

• Copyright 2014 Aniruddh Rangarajan

Language dc:language

en

Handle dc:identifier

http://hdl.handle.net/2142/72832

OAI identifier oai:identifier

oai:www.ideals.illinois.edu:2142/72832