Real-Space Transfer Transistors Grown by Metalorganic Chemical Vapor Deposition

This thesis describes the fabrication and characterization of real-space transfer transistors which are grown by metalorganic chemical vapor deposition. In the negative-resistance field-effect transistor and the charge-injection transistor, the standard GaAs electron channel is replaced with a strained-layer ln$\sb{x}$Ga$\sb{1-x}$As electron channel. With increasing indium composition in the channel, the drain current peak-to-valley ratio, at room temperature, is increased from 1.7 in GaAs electron channel devices to over 1200 in ln$\sb{0.22}$Ga$\sb{0.78}$As electron channel devices.

Name thesis:degree_name

Ph.D.

Level thesis:degree_level

Dissertation

Discipline thesis:degree_discipline

Electrical Engineering

Grantor

University of Illinois at Urbana-Champaign

Year dc:date

2014

Author dc:creator

• Favaro, Michael Ernest

Contributors dc:contributor

• Coleman, James J.

• Engineering, Electronics and Electrical

Identifier

(UMI)AAI9236457

OAI identifier oai:identifier

oai:www.ideals.illinois.edu:2142/71972