High Performance Indium-Gallium-Arsenide / Indium-Aluminum-Arsenide Transistors Grown on Indium-Phosphide by Molecular Beam Epitaxy

Described in this thesis are the growth by molecular beam epitaxy (MBE) and characteristics of InGaAs/InAlAs transistors. Superior properties of the InGaAs/InAlAs system have attracted a great deal of interest in electronic and optical device applications for this material system, and spurred enormous activities in opto-electronic integration. This thesis details the performance of many device structures investigated with state-of-the-art results. Non-alloyed contact structures, with substantial impact in submicron and nanostructure applications are emphasized.

Name thesis:degree_name

Ph.D.

Level thesis:degree_level

Dissertation

Discipline thesis:degree_discipline

Metallurgical Engineering

Grantor

University of Illinois at Urbana-Champaign

Year dc:date

2014

Author dc:creator

• Peng, Chin-Kun

• Engineering, Electronics and Electrical
• Engineering, Materials Science

Identifier

(UMI)AAI8908802

OAI identifier oai:identifier

oai:www.ideals.illinois.edu:2142/71858